{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984533","patent":{"patent_number":"US-11984533","title":"Light emitting device using a gallium nitride (GaN) based material","assignee":null,"inventors":[],"filing_date":"2019-07-01T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A light emitting device according to an embodiment of the present disclosure includes: a first layer including Alx2Inx1Ga(1-x1-x2) N (0<x1<1, 0≤x2<1); a second layer that is provided on the first layer and includes Aly2Iny1Ga(1-y1-y2) N (0<y1<1, 0≤y2<1) that is lattice relaxed with respect to the first layer; and a third layer that is provided on the second layer, includes Alz2Inz1Ga(1-z1-z2) N (0<z1<1, 0≤z2<1) that is lattice relaxed with respect to the second layer, and includes an active layer. A lattice constant aGAN of GaN in an in-plane direction, a lattice constant al of the first layer in an in-plane direction, a lattice constant a2 of the second layer in an in-plane direction, and a lattice constant a3 of the third layer in an in-plane direction have a relationship of aGAN<a2<a1, a3."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Light emitting device using a gallium nitride (GaN) based material","description":"A light emitting device according to an embodiment of the present disclosure includes: a first layer including Alx2Inx1Ga(1-x1-x2) N (0<x1<1, 0≤x2<1); a second layer that is provided on the first laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984533","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984533","citation_suggestion":"Patentable. \"Light emitting device using a gallium nitride (GaN) based material\" (US-11984533). https://patentable.app/patents/US-11984533","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984533","json":"https://patentable.app/api/llm-context/US-11984533","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:40:48.125Z"}