{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984534","patent":{"patent_number":"US-11984534","title":"Process for producing a semiconductor component based on a III-N compound","assignee":null,"inventors":[],"filing_date":"2019-12-18T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"The present description concerns a method of manufacturing a semiconductor component (170), including the successive steps of: providing a stack including a first semiconductor layer (105) made of a III-N compound and a second conductive layer (107) coating the first layer; forming a trench (110) crossing the second layer (107) and stopping on the first layer (105), said trench laterally delimiting a contact metallization in the second layer (107); forming in said trench (110) a metal spacer (111) made of a material different from that of the second layer (107), in contact with the sides of the contact metallization; and continuing said trench (110) through at least a portion of the thickness of the first layer (105)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process for producing a semiconductor component based on a III-N compound","description":"The present description concerns a method of manufacturing a semiconductor component (170), including the successive steps of: providing a stack including a first semiconductor layer (105) made of a I","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984534","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984534","citation_suggestion":"Patentable. \"Process for producing a semiconductor component based on a III-N compound\" (US-11984534). https://patentable.app/patents/US-11984534","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984534","json":"https://patentable.app/api/llm-context/US-11984534","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:38:35.060Z"}