{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11984535","patent":{"patent_number":"US-11984535","title":"III-nitride semiconductor light-emitting device comprising barrier layers and well layers and method of producing the same","assignee":null,"inventors":[],"filing_date":"2019-10-31T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"Provided is a III-nitride semiconductor light-emitting device having excellent light output power as compared with conventional devices and a method of producing the same. The III-nitride semiconductor light-emitting device has an emission wavelength of 200 nm to 350 nm and includes an n-type semiconductor layer; a light emitting layer in which N barrier layers 40b and N well layers 40w (where N is an integer) are alternately stacked in this order; an AlN guide layer; an electron blocking layer; and a p-type semiconductor layer in this order. The electron block layer is made of p-type AlzGa1-zN (0.50≤z≤0.80), and the barrier layers are made of n-type AlbGa1-bN (z+0.01≤b≤0.95)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"III-nitride semiconductor light-emitting device comprising barrier layers and well layers and method of producing the same","description":"Provided is a III-nitride semiconductor light-emitting device having excellent light output power as compared with conventional devices and a method of producing the same. The III-nitride semiconducto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11984535","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11984535","citation_suggestion":"Patentable. \"III-nitride semiconductor light-emitting device comprising barrier layers and well layers and method of producing the same\" (US-11984535). https://patentable.app/patents/US-11984535","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11984535","json":"https://patentable.app/api/llm-context/US-11984535","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:55:51.965Z"}