{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11985807","patent":{"patent_number":"US-11985807","title":"Method for manufacturing semiconductor structure and semiconductor structure","assignee":null,"inventors":[],"filing_date":"2021-08-11T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor structure includes: a first mask layer is formed on a dielectric layer, in which a first etching hole extending along a first direction parallel to the dielectric layer is formed in the first mask layer; a side of the first mask layer away from the dielectric layer is planarized; a second mask layer is formed on the first mask layer, in which a second etching hole extending along a second direction parallel to the dielectric layer is formed in the second mask layer, the first etching hole and the second etching hole constitute an etching hole; and the dielectric layer is etched along the etching hole to form the capacitor hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor structure and semiconductor structure","description":"A method for manufacturing a semiconductor structure includes: a first mask layer is formed on a dielectric layer, in which a first etching hole extending along a first direction parallel to the diele","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11985807","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11985807","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor structure and semiconductor structure\" (US-11985807). https://patentable.app/patents/US-11985807","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11985807","json":"https://patentable.app/api/llm-context/US-11985807","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:14:19.538Z"}