{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11985812","patent":{"patent_number":"US-11985812","title":"Semiconductor memory device including a trench gate structure and method of forming the same","assignee":null,"inventors":[],"filing_date":"2021-03-16T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"An apparatus includes a semiconductor substrate; a line-shaped trench in the semiconductor substrate, an inner wall of the line-shaped trench being covered with an insulating film; a first conductive member including first and second line-shaped portions, the first line-shaped portion filling a lower portion of the line-shaped trench; and line-shaped second and third conductive members extending along the inner wall of the line-shaped trench and facing each other, the line-shaped second and third conductive members having a void therebetween; wherein the second line-shaped portion of the first conductive member protrudes from a central portion of the first line-shaped portion to fill the void."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device including a trench gate structure and method of forming the same","description":"An apparatus includes a semiconductor substrate; a line-shaped trench in the semiconductor substrate, an inner wall of the line-shaped trench being covered with an insulating film; a first conductive ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11985812","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11985812","citation_suggestion":"Patentable. \"Semiconductor memory device including a trench gate structure and method of forming the same\" (US-11985812). https://patentable.app/patents/US-11985812","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11985812","json":"https://patentable.app/api/llm-context/US-11985812","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:23:17.268Z"}