{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11985814","patent":{"patent_number":"US-11985814","title":"Method for manufacturing bit line structure, method for manufacturing semiconductor structure, and semiconductor structure","assignee":null,"inventors":[],"filing_date":"2021-08-30T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method for manufacturing a bit line structure includes the following operations. A bit line conductive layer is formed on a surface of a semiconductor substrate, and the bit line conductive layer is partially located in a groove in the surface of the semiconductor substrate. A first protective layer is formed on surfaces of the bit line conductive layer and the semiconductor substrate. A first barrier layer is formed on a surface of the first protective layer. The surface of the first barrier layer is subjected with passivating treatment. A sacrificial layer is formed on the surface of the first barrier layer, and is provided with a filling part filled in the groove. A part, other than the filling part, of the sacrificial layer is cleaned and stripped."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing bit line structure, method for manufacturing semiconductor structure, and semiconductor structure","description":"A method for manufacturing a bit line structure includes the following operations. A bit line conductive layer is formed on a surface of a semiconductor substrate, and the bit line conductive layer is","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11985814","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11985814","citation_suggestion":"Patentable. \"Method for manufacturing bit line structure, method for manufacturing semiconductor structure, and semiconductor structure\" (US-11985814). https://patentable.app/patents/US-11985814","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11985814","json":"https://patentable.app/api/llm-context/US-11985814","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:02:40.476Z"}