{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11985824","patent":{"patent_number":"US-11985824","title":"Three-dimensional memory devices having dummy channel structures and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2020-10-29T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Three-dimensional (3D) memory devices and methods for forming the 3D memory devices are provided. In one example, a 3D memory device includes a substrate and a memory stack including interleaved conductive layers and dielectric layers on the substrate. The memory stack includes a core structure and a staircase structure. The staircase structure is on one side of the memory stack. The 3D memory device also includes a dummy channel structure extending vertically through the staircase structure. The dummy channel structure includes a plurality of sections along a vertical side of the dummy channel structure. The plurality of sections respectively interface with the interleaved conductive layers in the staircase structure. At least one of the plurality of sections includes a non-flat surface at an interface between the at least one of the plurality of sections and a corresponding conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory devices having dummy channel structures and methods for forming the same","description":"Three-dimensional (3D) memory devices and methods for forming the 3D memory devices are provided. In one example, a 3D memory device includes a substrate and a memory stack including interleaved condu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11985824","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11985824","citation_suggestion":"Patentable. \"Three-dimensional memory devices having dummy channel structures and methods for forming the same\" (US-11985824). https://patentable.app/patents/US-11985824","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11985824","json":"https://patentable.app/api/llm-context/US-11985824","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:39:56.300Z"}