{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11985905","patent":{"patent_number":"US-11985905","title":"Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devices","assignee":null,"inventors":[],"filing_date":"2023-01-23T00:00:00.000Z","publication_date":"2024-05-14T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A magnetic tunneling junction (MTJ) structure comprises a pinned layer on a bottom electrode. a barrier layer on the pinned layer, wherein a second metal re-deposition layer is on sidewalls of the barrier layer and the pinned layer, a free layer on the barrier layer wherein the free layer has a first width smaller than a second width of the pinned layer, a top electrode on the free layer having a same first width as the free layer wherein a first metal re-deposition layer is on sidewalls of the free layer and top electrode, and dielectric spacers on sidewalls of the free layer and top electrode covering the first metal re-deposition layer wherein the free layer and the top electrode together with the dielectric spacers have a same the second width as the pinned layer wherein the dielectric spacers prevent shorting between the first and second metal re-deposition layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devices","description":"A magnetic tunneling junction (MTJ) structure comprises a pinned layer on a bottom electrode. a barrier layer on the pinned layer, wherein a second metal re-deposition layer is on sidewalls of the bar","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11985905","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11985905","citation_suggestion":"Patentable. \"Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devices\" (US-11985905). https://patentable.app/patents/US-11985905","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11985905","json":"https://patentable.app/api/llm-context/US-11985905","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T17:25:04.903Z"}