{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990171","patent":{"patent_number":"US-11990171","title":"Threshold voltage-programmable field effect transistor-based memory cells and look-up table implemented using the memory cells","assignee":null,"inventors":[],"filing_date":"2022-02-15T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":11,"abstract":"Disclosed is threshold voltage (VT)-programmable field effect transistor (FET)-based memory cell including a first transistor and a second transistor (which has an electric-field based programmable VT) connected in series between two voltage source lines. The gates of the transistors are connected to different wordlines and a sense node is at the junction between the two transistors. In preferred embodiments, the first transistor is a PFET and the second transistor is an NFET. Different operating modes (e.g., write 0 or 1 and read) are achieved using specific combinations of voltage pulses on the wordlines and voltage source lines. The memory cell is non-volatile, exhibits relatively low leakage, and has a relatively small footprint as compared to a conventional memory cell. Also disclosed are a look-up table (LUT) incorporating multiple threshold voltage (VT)-programmable field effect transistor (FET)-based memory cells and associated methods."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Threshold voltage-programmable field effect transistor-based memory cells and look-up table implemented using the memory cells","description":"Disclosed is threshold voltage (VT)-programmable field effect transistor (FET)-based memory cell including a first transistor and a second transistor (which has an electric-field based programmable VT","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990171","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990171","citation_suggestion":"Patentable. \"Threshold voltage-programmable field effect transistor-based memory cells and look-up table implemented using the memory cells\" (US-11990171). https://patentable.app/patents/US-11990171","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990171","json":"https://patentable.app/api/llm-context/US-11990171","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:07:11.351Z"}