{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990189","patent":{"patent_number":"US-11990189","title":"Nonvolatile memory device and programming method of nonvolatile memory","assignee":null,"inventors":[],"filing_date":"2022-06-13T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","H01L","H01L","H01L","G11C","H01L","H01L","H01L"],"num_claims":20,"abstract":"A nonvolatile memory device includes at least one memory block and a control circuit. The at least one memory block includes a plurality of cell strings that are divided into a plurality of stacks disposed in the vertical direction, and each of the plurality of stacks includes at least one dummy word-line. The control circuit controls a program operation by applying a program voltage to a selected word-line of the plurality of cell strings during a program execution period and by reducing a voltage level of a dummy voltage applied to the at least one dummy word-line of at least one upper stack from among the plurality of stacks during the program execution period. The at least one upper stack is disposed at a higher position than a selected stack in the vertical direction and the selected stack from among the plurality of stacks includes the selected word-line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device and programming method of nonvolatile memory","description":"A nonvolatile memory device includes at least one memory block and a control circuit. The at least one memory block includes a plurality of cell strings that are divided into a plurality of stacks dis","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990189","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990189","citation_suggestion":"Patentable. \"Nonvolatile memory device and programming method of nonvolatile memory\" (US-11990189). https://patentable.app/patents/US-11990189","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990189","json":"https://patentable.app/api/llm-context/US-11990189","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:37:04.045Z"}