{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990204","patent":{"patent_number":"US-11990204","title":"Memory device using semiconductor element","assignee":null,"inventors":[],"filing_date":"2022-07-05T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":6,"abstract":"A page write operation is performed to hold positive hole groups generated by an impact ionization phenomenon, in a channel semiconductor layer of a memory cell and a page erase operation is performed to remove the positive hole groups out of the channel semiconductor layer. a refresh operation is performed to return the voltage of the channel semiconductor layer of a selected word line to a first data retention voltage thereby forming the positive hole groups by an impact ionization phenomenon in the channel semiconductor layer of the memory cell in which a voltage of the channel semiconductor layer is set to the first data retention voltage using the page write operation. The refresh operation is performed, with a switch circuit kept in a nonconducting state, concurrently with a page read operation of reading page data of a first memory cell group belonging to a first page."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device using semiconductor element","description":"A page write operation is performed to hold positive hole groups generated by an impact ionization phenomenon, in a channel semiconductor layer of a memory cell and a page erase operation is performed","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990204","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990204","citation_suggestion":"Patentable. \"Memory device using semiconductor element\" (US-11990204). https://patentable.app/patents/US-11990204","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990204","json":"https://patentable.app/api/llm-context/US-11990204","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:40:23.394Z"}