{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990336","patent":{"patent_number":"US-11990336","title":"Silicon epitaxial wafer production method and silicon epitaxial wafer","assignee":null,"inventors":[],"filing_date":"2019-08-05T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"To provide a silicon epitaxial wafer production method and a silicon epitaxial wafer in which the DIC defects can be suppressed, a silicon epitaxial wafer production method is provided, in which an epitaxial layer is grown in a vapor phase on a principal plane of a silicon single crystal wafer. The principal plane is a {110} plane or a plane having an off-angle of less than 1 degree from the {110} plane. The silicon epitaxial wafer production method includes setting a temperature of the silicon single crystal wafer to 1100° C. to 1135° C. and growing the epitaxial layer in the vapor phase at a growth rate of 2.0 μm/min to 3.0 μm/min."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon epitaxial wafer production method and silicon epitaxial wafer","description":"To provide a silicon epitaxial wafer production method and a silicon epitaxial wafer in which the DIC defects can be suppressed, a silicon epitaxial wafer production method is provided, in which an ep","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990336","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990336","citation_suggestion":"Patentable. \"Silicon epitaxial wafer production method and silicon epitaxial wafer\" (US-11990336). https://patentable.app/patents/US-11990336","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990336","json":"https://patentable.app/api/llm-context/US-11990336","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:32:20.356Z"}