{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990343","patent":{"patent_number":"US-11990343","title":"Gate metal formation on gallium nitride or aluminum gallium nitride","assignee":null,"inventors":[],"filing_date":"2019-12-06T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing an electrode structure for a device, such as a GaN or AlGaN device is described. In one example, the method includes providing a substrate (212) of GaN or AlGaN with a surface region of the GaN or AlGaN exposed through an opening (216) in a layer of silicon nitride (214) formed on the substrate. The method further includes depositing layers of W (222), in one example, or Ni (220) and W (222), in another example, on the substrate and the layer of silicon nitride using reactive evaporation and photoresist layers (230) having an undercut profile for liftoff. The method further includes removing the photoresist layers having the undercut profile, and depositing layers of WN (224) and Al over the underlying layers of W or Ni and W by sputtering."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate metal formation on gallium nitride or aluminum gallium nitride","description":"A method of manufacturing an electrode structure for a device, such as a GaN or AlGaN device is described. In one example, the method includes providing a substrate (212) of GaN or AlGaN with a surfac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990343","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990343","citation_suggestion":"Patentable. \"Gate metal formation on gallium nitride or aluminum gallium nitride\" (US-11990343). https://patentable.app/patents/US-11990343","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990343","json":"https://patentable.app/api/llm-context/US-11990343","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:12:39.040Z"}