{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990368","patent":{"patent_number":"US-11990368","title":"Doped selective metal caps to improve copper electromigration with ruthenium liner","assignee":null,"inventors":[],"filing_date":"2022-06-23T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes forming a barrier layer on exposed surfaces of a feature in a dielectric layer, forming a liner layer on the barrier layer, forming a seed layer on the liner layer, forming a metal fill on the seed layer by a metal fill process and overburdening the feature using an electroplating process, performing a planarization process to expose a top surface of the dielectric layer, and selectively forming a cobalt-aluminum alloy cap layer on the barrier layer, the liner layer, the seed layer, and the metal fill by exposing the substrate to a cobalt-containing precursor and an aluminum-containing precursor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Doped selective metal caps to improve copper electromigration with ruthenium liner","description":"Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes forming a barrier layer on expose","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990368","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990368","citation_suggestion":"Patentable. \"Doped selective metal caps to improve copper electromigration with ruthenium liner\" (US-11990368). https://patentable.app/patents/US-11990368","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990368","json":"https://patentable.app/api/llm-context/US-11990368","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:32:20.441Z"}