{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990400","patent":{"patent_number":"US-11990400","title":"Capping layer overlying dielectric structure to increase reliability","assignee":null,"inventors":[],"filing_date":"2022-06-01T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Capping layer overlying dielectric structure to increase reliability","description":"Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990400","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990400","citation_suggestion":"Patentable. \"Capping layer overlying dielectric structure to increase reliability\" (US-11990400). https://patentable.app/patents/US-11990400","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990400","json":"https://patentable.app/api/llm-context/US-11990400","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:01:54.876Z"}