{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990431","patent":{"patent_number":"US-11990431","title":"Semiconductor structures with via openings and methods of making the same","assignee":null,"inventors":[],"filing_date":"2021-11-17T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"The present disclosure discloses a semiconductor structure having an insulating layer disposed on a wafer active surface of a semiconductor wafer for covering the wafer active surface. The insulating layer may be a protective layer in some embodiments and a cover layer in other embodiments. The insulating layer has via openings to expose contact pads for leading out electrical connections. In particular, the via openings are formed by a multi-step etching process (such as a two-step etching process) without damaging the contact pads. The two-step etching process includes a first laser etching process using normal pulse (P) and normal energy to form partial via openings in the cover layer. The second etching process includes either a laser etching process using low P and low E or a plasma etching process. The second etching process avoids damaging the contact pads."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structures with via openings and methods of making the same","description":"The present disclosure discloses a semiconductor structure having an insulating layer disposed on a wafer active surface of a semiconductor wafer for covering the wafer active surface. The insulating ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990431","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990431","citation_suggestion":"Patentable. \"Semiconductor structures with via openings and methods of making the same\" (US-11990431). https://patentable.app/patents/US-11990431","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990431","json":"https://patentable.app/api/llm-context/US-11990431","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:42:18.527Z"}