{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990476","patent":{"patent_number":"US-11990476","title":"Semiconductor nanowire device having (111)-plane channel sidewalls","assignee":null,"inventors":[],"filing_date":"2022-06-16T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["H01L","B82Y","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integrated circuit structure includes a first semiconductor device including a plurality of vertically stacked nanowires disposed above a substrate, each of the nanowires comprising a discrete channel region having <111> lateral sidewalls along a <110> carrier transport direction. The integrated circuit structure also includes a second semiconductor device including a semiconductor fin disposed above the substrate, the semiconductor fin having a channel region with a top and side surfaces, the channel region having <111> lateral sidewalls along a <110> carrier transport direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor nanowire device having (111)-plane channel sidewalls","description":"Semiconductor nanowire devices having (111)-plane channel sidewalls and methods of fabricating semiconductor nanowire devices having (111)-plane channel sidewalls are described. For example, an integr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990476","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990476","citation_suggestion":"Patentable. \"Semiconductor nanowire device having (111)-plane channel sidewalls\" (US-11990476). https://patentable.app/patents/US-11990476","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990476","json":"https://patentable.app/api/llm-context/US-11990476","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:37:16.384Z"}