{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990515","patent":{"patent_number":"US-11990515","title":"Up-diffusion suppression in a power MOSFET","assignee":null,"inventors":[],"filing_date":"2022-12-08T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method includes forming an ion-implanted capping layer in a first epitaxial layer disposed on a silicon substrate. The ion-implanted capping layer is doped with a second dopant of a same conductivity type as a first dopant in the silicon substrate. The second dopant has a lower diffusivity than the diffusivity of the first dopant. The ion-implanted capping layer has a thickness configured to contain up-diffusion of the first dopant from the silicon wafer in the first epitaxial layer in thermal processes for fabricating a vertical MOSFET device in the substrate. The ion-implanted capping layer is configured to limit up-diffusion of the first dopant from the silicon wafer through the ion-implanted capping layer into a second epitaxial layer such that a concentration of the first dopant in the second epitaxial layer is lower than a concentration of the first dopant in the first epitaxial layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Up-diffusion suppression in a power MOSFET","description":"A method includes forming an ion-implanted capping layer in a first epitaxial layer disposed on a silicon substrate. The ion-implanted capping layer is doped with a second dopant of a same conductivit","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990515","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990515","citation_suggestion":"Patentable. \"Up-diffusion suppression in a power MOSFET\" (US-11990515). https://patentable.app/patents/US-11990515","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990515","json":"https://patentable.app/api/llm-context/US-11990515","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:19:41.894Z"}