{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990522","patent":{"patent_number":"US-11990522","title":"Effective work function tuning via silicide induced interface dipole modulation for metal gates","assignee":null,"inventors":[],"filing_date":"2022-12-09T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["B82Y","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel layer, a work function metal layer over the high-k gate dielectric layer, and a bulk metal layer over the work function metal layer. The work function metal layer includes a first portion and a second portion over the first portion. Both the first portion and the second portion are conductive. Materials included in the second portion are also included in the first portion. The first portion is doped with silicon at a first dopant concentration, and the second portion is not doped with silicon or is doped with silicon at a second dopant concentration lower than the first dopant concentration."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Effective work function tuning via silicide induced interface dipole modulation for metal gates","description":"A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990522","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990522","citation_suggestion":"Patentable. \"Effective work function tuning via silicide induced interface dipole modulation for metal gates\" (US-11990522). https://patentable.app/patents/US-11990522","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990522","json":"https://patentable.app/api/llm-context/US-11990522","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:57:26.862Z"}