{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11990523","patent":{"patent_number":"US-11990523","title":"Shield gate trench MOSFET device and method for making the same","assignee":null,"inventors":[],"filing_date":"2021-10-13T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":9,"abstract":"The present application provides an SGT MOSFET device, a gate structure of which is a left-right structure, wherein a second field plate conductive material layer with a depth greater than that of a gate conductive material layer is formed between a source conductive material layer and the gate conductive material layer. When the device is reversely biased, depletion capability with respect to the drift region at a side close to a channel region is enhanced due to the feature that a spacing between the second field plate conductive material layer and the drift region is less than a spacing between the source conductive material layer and the drift region. The present application further provides a method for manufacturing an SGT MOSFET device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Shield gate trench MOSFET device and method for making the same","description":"The present application provides an SGT MOSFET device, a gate structure of which is a left-right structure, wherein a second field plate conductive material layer with a depth greater than that of a g","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11990523","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11990523","citation_suggestion":"Patentable. \"Shield gate trench MOSFET device and method for making the same\" (US-11990523). https://patentable.app/patents/US-11990523","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11990523","json":"https://patentable.app/api/llm-context/US-11990523","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:01:52.292Z"}