{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11991882","patent":{"patent_number":"US-11991882","title":"Method for fabricating memory device","assignee":null,"inventors":[],"filing_date":"2021-11-16T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for fabricating a memory device includes: providing a substrate; forming a first dielectric layer over the substrate; forming a plurality of conductive layers and a plurality of dielectric layers alternately and horizontally disposed on the substrate; forming a channel column structure on the substrate and in the plurality of conductive layers and the plurality of dielectric layers, where a side wall of the channel column structure is in contact with the plurality of conductive layers; forming a second dielectric layer covering the first dielectric layer; and forming, in the first and second dielectric layers, a conductive column structure adjacent to the channel column structure and in contact with one of the plurality of conductive layers, where the conductive column structure includes a liner insulating layer as a shell layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating memory device","description":"A method for fabricating a memory device includes: providing a substrate; forming a first dielectric layer over the substrate; forming a plurality of conductive layers and a plurality of dielectric la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11991882","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11991882","citation_suggestion":"Patentable. \"Method for fabricating memory device\" (US-11991882). https://patentable.app/patents/US-11991882","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11991882","json":"https://patentable.app/api/llm-context/US-11991882","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:03:03.106Z"}