{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11991886","patent":{"patent_number":"US-11991886","title":"Three-dimensional stackable ferroelectric random access memory devices and methods of forming","assignee":null,"inventors":[],"filing_date":"2023-01-09T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a first layer stack and a second layer stack successively over a substrate, where the first layer stack and the second layer stack have a same layered structure that includes a layer of a first electrically conductive material over a layer of a first dielectric material, where the first layer stack extends beyond lateral extents of the second layer stack; forming a trench that extends through the first layer stack and the second layer stack; lining sidewalls and a bottom of the trench with a ferroelectric material; conformally forming a channel material in the trench over the ferroelectric material; filling the trench with a second dielectric material; forming a first opening and a second opening in the second dielectric material; and filling the first opening and the second opening with a second electrically conductive material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional stackable ferroelectric random access memory devices and methods of forming","description":"A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a first layer stack and a second layer stack successively over a substrate, where the first layer stack and th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11991886","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11991886","citation_suggestion":"Patentable. \"Three-dimensional stackable ferroelectric random access memory devices and methods of forming\" (US-11991886). https://patentable.app/patents/US-11991886","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11991886","json":"https://patentable.app/api/llm-context/US-11991886","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:02:14.364Z"}