{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11991932","patent":{"patent_number":"US-11991932","title":"Post-treatment processes for ion beam etching of magnetic tunnel junction and structures formed by the same","assignee":null,"inventors":[],"filing_date":"2021-05-18T00:00:00.000Z","publication_date":"2024-05-21T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A magnetic tunnel junction device includes a pillar structure including, from bottom to top, a bottom electrode and a magnetic tunnel junction structure, a top electrode overlying the magnetic tunnel junction structure, and a dielectric metal oxide layer extending from a sidewall of the pillar structure to a sidewall of the top electrode. The magnetic tunnel junction structure contains a reference magnetization layer including a first ferromagnetic material, a tunnel barrier layer, and a free magnetization layer including a second ferromagnetic material. The top electrode includes a metallic material containing a nonmagnetic metal element. The dielectric metal oxide layer may be formed by performing an oxidation process that oxidizes a residual metal film after a focused ion beam etch process, and eliminates conductive paths from surfaces of the pillar structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Post-treatment processes for ion beam etching of magnetic tunnel junction and structures formed by the same","description":"A magnetic tunnel junction device includes a pillar structure including, from bottom to top, a bottom electrode and a magnetic tunnel junction structure, a top electrode overlying the magnetic tunnel ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11991932","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11991932","citation_suggestion":"Patentable. \"Post-treatment processes for ion beam etching of magnetic tunnel junction and structures formed by the same\" (US-11991932). https://patentable.app/patents/US-11991932","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11991932","json":"https://patentable.app/api/llm-context/US-11991932","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:02:43.039Z"}