{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996132","patent":{"patent_number":"US-11996132","title":"Three transistor semiconductor device with metal oxide channel region, operation method thereof, and electronic device","assignee":null,"inventors":[],"filing_date":"2019-11-20T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":8,"abstract":"A semiconductor device includes a first transistor one of a source and a drain of which is electrically connected to a first wiring for reading data; a second transistor one of a source and a drain of which is electrically connected to a gate of the first transistor and the other of the source and the drain of which is electrically connected to a second wiring for writing the data; and a third transistor one of a source and a drain of which is electrically connected to the gate of the first transistor and the other of the source and the drain of which is electrically connected to a capacitor for retaining electric charge corresponding to the data, and the third transistor includes a metal oxide in a channel formation region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three transistor semiconductor device with metal oxide channel region, operation method thereof, and electronic device","description":"A semiconductor device includes a first transistor one of a source and a drain of which is electrically connected to a first wiring for reading data; a second transistor one of a source and a drain of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996132","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996132","citation_suggestion":"Patentable. \"Three transistor semiconductor device with metal oxide channel region, operation method thereof, and electronic device\" (US-11996132). https://patentable.app/patents/US-11996132","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996132","json":"https://patentable.app/api/llm-context/US-11996132","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:40:06.265Z"}