{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996133","patent":{"patent_number":"US-11996133","title":"Memory circuit using oxide semiconductor","assignee":null,"inventors":[],"filing_date":"2020-06-09T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":9,"abstract":"Since power source voltages are different depending on circuits used for devices, a circuit for outputting at least two or more power sources is additionally prepared. An object is to unify outputs of the power source voltages. A transistor using an oxide semiconductor is provided in such a manner that electrical charge is retained in a node where the transistor and a capacitor are electrically connected to each other, a reset signal is applied to a gate of the transistor to switch the states of the transistor from off to on, and the node is reset when the transistor is on. A circuit configuration that generates and utilizes a potential higher than or equal to a potential of a single power source can be achieved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory circuit using oxide semiconductor","description":"Since power source voltages are different depending on circuits used for devices, a circuit for outputting at least two or more power sources is additionally prepared. An object is to unify outputs of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996133","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996133","citation_suggestion":"Patentable. \"Memory circuit using oxide semiconductor\" (US-11996133). https://patentable.app/patents/US-11996133","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996133","json":"https://patentable.app/api/llm-context/US-11996133","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:17:23.845Z"}