{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996144","patent":{"patent_number":"US-11996144","title":"Non-volatile memory cell with multiple ferroelectric memory elements (FMEs)","assignee":null,"inventors":[],"filing_date":"2022-06-15T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A non-volatile memory (NVM) is formed of memory cells each having multiple ferroelectric memory elements (FMEs). Each FME stores data in relation to an electrical polarity of a recording layer formed of ferroelectric or anti-ferroelectric material. Each multi-FME memory cell is coupled to a set of external control lines activated by a control circuit in a selected order to perform program and/or read operations upon the FMEs. The FMEs may share a nominally identical construction or may have different constructions. Data are programmed and written responsive to the respective program/read responses of the FMEs. Constructions can include ferroelectric tunneling junctions (FTJs), ferroelectric random access memory (FeRAM), and ferroelectric field effect transistors (FeFETs). The NVM may form a portion of a data storage device, such as a solid-state drive (SSD)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile memory cell with multiple ferroelectric memory elements (FMEs)","description":"A non-volatile memory (NVM) is formed of memory cells each having multiple ferroelectric memory elements (FMEs). Each FME stores data in relation to an electrical polarity of a recording layer formed ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996144","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996144","citation_suggestion":"Patentable. \"Non-volatile memory cell with multiple ferroelectric memory elements (FMEs)\" (US-11996144). https://patentable.app/patents/US-11996144","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996144","json":"https://patentable.app/api/llm-context/US-11996144","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:32:55.532Z"}