{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996288","patent":{"patent_number":"US-11996288","title":"Gallium oxide film based on sapphire substrate as well as growth method and application thereof","assignee":null,"inventors":[],"filing_date":"2018-10-08T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a method below, including: forming more than one α-(AlxGa1-x)2O3 strain buffering layers on the sapphire substrate by means of pulsed epitaxial growth, wherein 0.99≥x≥0.01; and forming gallium oxide epitaxial layers on the α-(AlxGa1-x)2O3 strain buffering layers. The growth method provided can not only avoid the technical difficulty of contradictory epitaxial temperatures of α-Ga2O3 and α-Al2O3, but also effectively reduce the defect density of α-Ga2O3 epitaxial film, thus further improving the crystal quality of the α-Ga2O3 epitaxial film materials."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gallium oxide film based on sapphire substrate as well as growth method and application thereof","description":"The disclosure provides a gallium oxide film based on sapphire substrate as well as a growth method and an application thereof. The gallium oxide film based on sapphire substrate is prepared by a meth","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996288","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996288","citation_suggestion":"Patentable. \"Gallium oxide film based on sapphire substrate as well as growth method and application thereof\" (US-11996288). https://patentable.app/patents/US-11996288","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996288","json":"https://patentable.app/api/llm-context/US-11996288","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:48:21.632Z"}