{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996291","patent":{"patent_number":"US-11996291","title":"Method for manufacturing semiconductor device including annealing a germanium layer to diffuse germanium atoms into a silicon substrate","assignee":null,"inventors":[],"filing_date":"2022-06-27T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device is provided. The method includes depositing a germanium layer over a silicon substrate; forming an oxide capping layer over the germanium layer; after forming the oxide capping layer, annealing the germanium layer to diffuse germanium atoms of the germanium layer into the silicon substrate, such that a portion of the silicon substrate is turned into a silicon germanium layer; and forming a gate structure over the silicon germanium layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device including annealing a germanium layer to diffuse germanium atoms into a silicon substrate","description":"A method for manufacturing a semiconductor device is provided. The method includes depositing a germanium layer over a silicon substrate; forming an oxide capping layer over the germanium layer; after","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996291","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996291","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device including annealing a germanium layer to diffuse germanium atoms into a silicon substrate\" (US-11996291). https://patentable.app/patents/US-11996291","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996291","json":"https://patentable.app/api/llm-context/US-11996291","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:57:44.202Z"}