{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996321","patent":{"patent_number":"US-11996321","title":"Semiconductor structure and method for forming the same","assignee":null,"inventors":[],"filing_date":"2021-06-17T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","B82Y","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a conductive feature through a first dielectric layer, sequentially forming a second dielectric layer and a third dielectric layer over the first dielectric layer, and etching the third dielectric layer to form an opening. A first width of the opening at a top surface of the third dielectric layer is greater than a second width of the opening at a first interface between the third dielectric layer and the second dielectric layer. The method also includes etching the second dielectric layer until the opening extends to the conductive feature, thereby forming an enlarged opening, and forming a metal material in the enlarged opening. A third width of the enlarged opening at the first interface is equal to or less than a fourth width of the enlarged opening at a second interface between the second dielectric layer and the first dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and method for forming the same","description":"A method includes forming a conductive feature through a first dielectric layer, sequentially forming a second dielectric layer and a third dielectric layer over the first dielectric layer, and etchin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996321","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996321","citation_suggestion":"Patentable. \"Semiconductor structure and method for forming the same\" (US-11996321). https://patentable.app/patents/US-11996321","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996321","json":"https://patentable.app/api/llm-context/US-11996321","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:41:44.293Z"}