{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996330","patent":{"patent_number":"US-11996330","title":"Crystal efficient SiC device wafer production","assignee":null,"inventors":[],"filing_date":"2020-05-20T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":18,"abstract":"There is provided a method for manufacturing a SiC device wafer comprising the steps: a) slicing and polishing a SiC boule to thicker substrates compared to the usual thickness in the prior art, b) creating a device wafer on the substrate, c) removing the device wafer from the remaining substrate, d) adding SiC to the remaining substrate so that the original thickness of the substrate is essentially restored, and repeating steps b)-d). The removal of the device wafer can be made for instance by laser slicing. Advantages include that the SiC material loss is significantly decreased and the boule material used for device wafers is considerably increased, the substrates become more stable especially during high temperature processes, the warp and bow is reduced, the risk of breakage is decreased."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Crystal efficient SiC device wafer production","description":"There is provided a method for manufacturing a SiC device wafer comprising the steps: a) slicing and polishing a SiC boule to thicker substrates compared to the usual thickness in the prior art, b) cr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996330","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996330","citation_suggestion":"Patentable. \"Crystal efficient SiC device wafer production\" (US-11996330). https://patentable.app/patents/US-11996330","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996330","json":"https://patentable.app/api/llm-context/US-11996330","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:30:59.238Z"}