{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996407","patent":{"patent_number":"US-11996407","title":"Self-aligned isolation for self-aligned contacts for vertical FETS","assignee":null,"inventors":[],"filing_date":"2021-07-12T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A method for manufacturing a vertical FET device includes providing a semiconductor substrate structure including a semiconductor substrate and a first semiconductor layer coupled to the semiconductor substrate. The first semiconductor layer is characterized by a first conductivity type. The method also includes forming a plurality of semiconductor fins coupled to the first semiconductor layer. Each of the plurality of semiconductor fins is separated by one of a plurality of recess regions. The method further includes epitaxially regrowing a semiconductor gate layer including a surface region in the plurality of recess regions. The method also includes forming an isolation region within the surface region of the semiconductor gate layer. The isolation region surrounds each of the plurality of semiconductor fins. The method includes forming a source contact structure coupled to each of the plurality of semiconductor fins and forming a gate contact structure coupled to the semiconductor gate layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned isolation for self-aligned contacts for vertical FETS","description":"A method for manufacturing a vertical FET device includes providing a semiconductor substrate structure including a semiconductor substrate and a first semiconductor layer coupled to the semiconductor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996407","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996407","citation_suggestion":"Patentable. \"Self-aligned isolation for self-aligned contacts for vertical FETS\" (US-11996407). https://patentable.app/patents/US-11996407","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996407","json":"https://patentable.app/api/llm-context/US-11996407","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:57:59.353Z"}