{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996447","patent":{"patent_number":"US-11996447","title":"Field effect transistors with gate electrode self-aligned to semiconductor fin","assignee":null,"inventors":[],"filing_date":"2022-02-22T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"Monolithic FETs including a fin of a first semiconductor composition disposed on a sub-fin of a second composition. In some examples, an InGaAs fin is grown over GaAs sub-fin. The sub-fin may be epitaxially grown from a seeding surface disposed within a trench defined in an isolation dielectric. The sub-fin may be planarized with the isolation dielectric. The fin may then be epitaxially grown from the planarized surface of the sub-fin. A gate stack may be disposed over the fin with the gate stack contacting the planarized surface of the isolation dielectric so as to be self-aligned with the interface between the fin and sub-fin. Other embodiments may be described and/or claimed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Field effect transistors with gate electrode self-aligned to semiconductor fin","description":"Monolithic FETs including a fin of a first semiconductor composition disposed on a sub-fin of a second composition. In some examples, an InGaAs fin is grown over GaAs sub-fin. The sub-fin may be epita","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996447","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996447","citation_suggestion":"Patentable. \"Field effect transistors with gate electrode self-aligned to semiconductor fin\" (US-11996447). https://patentable.app/patents/US-11996447","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996447","json":"https://patentable.app/api/llm-context/US-11996447","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:40:08.197Z"}