{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996452","patent":{"patent_number":"US-11996452","title":"Semiconductor device including an IGBT with reduced variation in threshold voltage","assignee":null,"inventors":[],"filing_date":"2021-01-13T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":31,"abstract":"There is provided a semiconductor device including: a semiconductor substrate that has an upper surface and a lower surface and that is provided with a drift region of a first conductivity type; a trench portion that is provided to reach the drift region from the upper surface of the semiconductor substrate; and a mesa portion that is interposed between trench portions, in which the mesa portion has a base region of a second conductivity type that is provided between the drift region and the upper surface, and a first region that has a concentration peak of a hydrogen chemical concentration at a first depth position in the mesa portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including an IGBT with reduced variation in threshold voltage","description":"There is provided a semiconductor device including: a semiconductor substrate that has an upper surface and a lower surface and that is provided with a drift region of a first conductivity type; a tre","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996452","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996452","citation_suggestion":"Patentable. \"Semiconductor device including an IGBT with reduced variation in threshold voltage\" (US-11996452). https://patentable.app/patents/US-11996452","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996452","json":"https://patentable.app/api/llm-context/US-11996452","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:36:27.780Z"}