{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996454","patent":{"patent_number":"US-11996454","title":"Gate-last ferroelectric field effect transistor and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2021-09-25T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"A gate-last ferroelectric field effect transistor includes a substrate, isolation regions, a gate structure, a side wall spacer, source and drain regions, a first metal silicide layer and an interlayer dielectric layer which are sequentially arranged from bottom to top; the present disclosure further provides a manufacturing method of a gate-last ferroelectric field effect transistor; according to structural characteristics of the gate-last ferroelectric field effect transistor and crystalline characteristics of a hafnium oxide-based ferroelectric film, a dummy gate is first introduced in a manufacturing process of the gate-last ferroelectric field effect transistor; afterwards, high-temperature annealing is performed to make sure that an unannealed hafnium oxide-based film is crystallized to form a ferroelectric phase; finally the dummy gate is removed and a gate electrode layer is deposited to meet performance requirements of the gate-last ferroelectric field effect transistor; and the gate-last ferroelectric field effect transistor has an excellent application prospect."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Gate-last ferroelectric field effect transistor and manufacturing method thereof","description":"A gate-last ferroelectric field effect transistor includes a substrate, isolation regions, a gate structure, a side wall spacer, source and drain regions, a first metal silicide layer and an interlaye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996454","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996454","citation_suggestion":"Patentable. \"Gate-last ferroelectric field effect transistor and manufacturing method thereof\" (US-11996454). https://patentable.app/patents/US-11996454","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996454","json":"https://patentable.app/api/llm-context/US-11996454","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:54:18.209Z"}