{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996459","patent":{"patent_number":"US-11996459","title":"Counteracting semiconductor material loss during semiconductor structure formation","assignee":null,"inventors":[],"filing_date":"2021-05-05T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","B82Y"],"num_claims":10,"abstract":"Example embodiments relate to counteracting semiconductor material loss during semiconductor structure formation. One embodiment includes a method for forming a semiconductor structure. The method includes providing a structure. The structure includes a substrate. The structure also includes a layer stack on the substrate. The layer stack includes at least one semiconductor layer of a semiconductor material and at least one sacrificial layer under the semiconductor layer. Further, the structure includes a trench through the layer stack. The further also includes forming a recess in the layer stack by etching a portion of the sacrificial layer exposed by the trench. The etching includes a preferential etch of the sacrificial layer with respect to the semiconductor layer. Additionally, the method includes epitaxially growing a liner of the semiconductor material onto surfaces of the semiconductor layer exposed by the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Counteracting semiconductor material loss during semiconductor structure formation","description":"Example embodiments relate to counteracting semiconductor material loss during semiconductor structure formation. One embodiment includes a method for forming a semiconductor structure. The method inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996459","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996459","citation_suggestion":"Patentable. \"Counteracting semiconductor material loss during semiconductor structure formation\" (US-11996459). https://patentable.app/patents/US-11996459","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996459","json":"https://patentable.app/api/llm-context/US-11996459","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:14:20.640Z"}