{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11996464","patent":{"patent_number":"US-11996464","title":"Method of fabricating diode structure","assignee":null,"inventors":[],"filing_date":"2022-05-11T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"A method of manufacturing a diode structure includes forming a first stack on a silicon layer on a substrate. A first sidewall spacer extending along and covering a sidewall of the first stack is formed. The silicon layer is selectively etched to a first predetermined depth, thereby forming a second stack. The remaining silicon layer includes a silicon base. A second sidewall spacer extending along and covering a sidewall of the second stack is formed. The silicon base is selectively etched to form a third stack on the substrate. With the second sidewall spacer as a mask, lateral plasma ion implantation is performed. Defects at the interface between two adjacent semiconductor layers can be reduced by the method."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating diode structure","description":"A method of manufacturing a diode structure includes forming a first stack on a silicon layer on a substrate. A first sidewall spacer extending along and covering a sidewall of the first stack is form","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11996464","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11996464","citation_suggestion":"Patentable. \"Method of fabricating diode structure\" (US-11996464). https://patentable.app/patents/US-11996464","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11996464","json":"https://patentable.app/api/llm-context/US-11996464","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:22:40.442Z"}