{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11997850","patent":{"patent_number":"US-11997850","title":"Three-dimensional memory device with staircase etch stop structures and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2021-08-25T00:00:00.000Z","publication_date":"2024-05-28T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, and memory opening fill structures vertically extending through the alternating stack. An insulating liner overlies stepped surfaces of the alternating stack in a staircase region. A plurality of discrete dielectric plates can be formed over the insulating liner. In one embodiment, the plurality of discrete dielectric plates can function as etch stop structures for formation of contact via structures that contact underlying portions of the electrically conductive layers. In another embodiment, the plurality of discrete dielectric plates may be replaced with a metallic material that forms extensions of the electrically conductive layers, and can be employed as etch stop structures during formation of contact via structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device with staircase etch stop structures and methods for forming the same","description":"A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, and memory opening fill structures vertically extending through the alternating","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11997850","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11997850","citation_suggestion":"Patentable. \"Three-dimensional memory device with staircase etch stop structures and methods for forming the same\" (US-11997850). https://patentable.app/patents/US-11997850","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11997850","json":"https://patentable.app/api/llm-context/US-11997850","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:17:01.732Z"}