{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12001680","patent":{"patent_number":"US-12001680","title":"Utilizing last successful read voltage level in memory access operations","assignee":null,"inventors":[],"filing_date":"2022-08-24T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["G06F","G11C","G06F","G06F","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"An example method of performing read operation with respect to a memory device comprises: receiving a request to perform a read operation with respect to a memory page of a memory device; identifying a block family associated with a block comprising the memory page; determining a block family-based read voltage level associated with the block family; performing, using the block family-based read voltage level, a read operation with respect to the memory page; determining, by performing an error correction operation with respect to the memory page, a new read voltage level associated with the block family; and associating, by a last successful read voltage level memory data structure, the new read voltage level as a last the successful read voltage level with the block family."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Utilizing last successful read voltage level in memory access operations","description":"An example method of performing read operation with respect to a memory device comprises: receiving a request to perform a read operation with respect to a memory page of a memory device; identifying ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12001680","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12001680","citation_suggestion":"Patentable. \"Utilizing last successful read voltage level in memory access operations\" (US-12001680). https://patentable.app/patents/US-12001680","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12001680","json":"https://patentable.app/api/llm-context/US-12001680","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:15:09.658Z"}