{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002499","patent":{"patent_number":"US-12002499","title":"Using split word lines and switches for reducing capacitive loading on a memory system","assignee":null,"inventors":[],"filing_date":"2022-07-20T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","H01L","G11C","G11C"],"num_claims":20,"abstract":"Systems and methods disclosed herein are related to a memory system. In one aspect, the memory system includes a first set of memory cells including a first string of memory cells and a second string of memory cells; and a first switch including: a first electrode connected to first electrodes of the first string of memory cells and first electrodes of the second string of memory cells, and a second electrode connected to a first global bit line, wherein gate electrodes of the first string of memory cells are connected to a first word line and gate electrodes of the second string of memory cells are connected to a second word line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Using split word lines and switches for reducing capacitive loading on a memory system","description":"Systems and methods disclosed herein are related to a memory system. In one aspect, the memory system includes a first set of memory cells including a first string of memory cells and a second string ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002499","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002499","citation_suggestion":"Patentable. \"Using split word lines and switches for reducing capacitive loading on a memory system\" (US-12002499). https://patentable.app/patents/US-12002499","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002499","json":"https://patentable.app/api/llm-context/US-12002499","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:43:05.696Z"}