{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002500","patent":{"patent_number":"US-12002500","title":"Writing method and erasing method of fusion memory","assignee":null,"inventors":[],"filing_date":"2019-01-28T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["G11C","G11C","G06N","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":15,"abstract":"A writing method and erasing method of a fusion memory are provided, and the fusion memory includes a plurality of memory cells, and each memory cell of the plurality of memory cells includes a bulk substrate; a source and a drain on the bulk substrate, a channel region extending between the source and the drain, and a ferroelectric layer and a gate stacked on the channel region; and the writing method includes: applying a first voltage between the gate of at least one memory cell and the bulk of at least one memory cell, in which the first voltage is less than a reversal voltage at which the ferroelectric layer is polarization reversed, and each of the source and the drain is grounded or in a floating state."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Writing method and erasing method of fusion memory","description":"A writing method and erasing method of a fusion memory are provided, and the fusion memory includes a plurality of memory cells, and each memory cell of the plurality of memory cells includes a bulk s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002500","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002500","citation_suggestion":"Patentable. \"Writing method and erasing method of fusion memory\" (US-12002500). https://patentable.app/patents/US-12002500","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002500","json":"https://patentable.app/api/llm-context/US-12002500","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:14:45.708Z"}