{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002527","patent":{"patent_number":"US-12002527","title":"Programmable resistance memory on wide-bandgap semiconductor technologies","assignee":null,"inventors":[],"filing_date":"2022-01-25T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"Programmable resistive memory can be integrated with wide-bandgap semiconductor devices on a wide-bandgap semiconductor, silicon, or insulator substrate. The wide-bandgap semiconductor can be group IV-IV, III-V, or II-VI crystal or compound semiconductor, such as silicon carbide or gallium nitride. The programmable resistive memory can be PCRAM, RRAM, MRAM, or OTP. The OTP element can be a metal, silicon, polysilicon, silicided polysilicon, or thermally insulated wide-bandgap semiconductor. The selector in a programmable resistive memory can be a MOS or diode fabricated by wide-bandgap semiconductor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Programmable resistance memory on wide-bandgap semiconductor technologies","description":"Programmable resistive memory can be integrated with wide-bandgap semiconductor devices on a wide-bandgap semiconductor, silicon, or insulator substrate. The wide-bandgap semiconductor can be group IV","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002527","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002527","citation_suggestion":"Patentable. \"Programmable resistance memory on wide-bandgap semiconductor technologies\" (US-12002527). https://patentable.app/patents/US-12002527","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002527","json":"https://patentable.app/api/llm-context/US-12002527","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:39:07.773Z"}