{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002660","patent":{"patent_number":"US-12002660","title":"Semiconductor manufacturing chamber with plasma/gas flow control device","assignee":null,"inventors":[],"filing_date":"2022-02-15T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method of plasma etching a semiconductor wafer includes: securing the semiconductor wafer to a mounting platform within a process chamber such that an outer edge of the semiconductor wafer is encircled by a sloped annular ring having a plurality of perforation therein, the sloped annular ring having an inner edge at a first end of the sloped annular ring and an outer edge at a second end of the sloped annular ring. Suitably, the first end is opposite the second end and the first end resides in a first plane and the second end resides in a second plane different from the first plane. The method further includes generating a plasma within the process chamber such that the semiconductor wafer is exposed to the plasma and creating a flow of at least one of plasma and gas through the perforations in the sloped annular ring."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor manufacturing chamber with plasma/gas flow control device","description":"A method of plasma etching a semiconductor wafer includes: securing the semiconductor wafer to a mounting platform within a process chamber such that an outer edge of the semiconductor wafer is encirc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002660","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002660","citation_suggestion":"Patentable. \"Semiconductor manufacturing chamber with plasma/gas flow control device\" (US-12002660). https://patentable.app/patents/US-12002660","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002660","json":"https://patentable.app/api/llm-context/US-12002660","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:36:52.285Z"}