{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002683","patent":{"patent_number":"US-12002683","title":"Lateral etching of silicon","assignee":null,"inventors":[],"filing_date":"2022-04-05T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","B82Y","H01L","H01L"],"num_claims":20,"abstract":"A method of processing a substrate that includes: positioning a substrate in a plasma processing chamber, the substrate including a layer stack of alternating layers of silicon (Si) layers and silicon-germanium (SiGe) layers, the substrate including a recess that exposes sidewalls of the Si layers and sidewalls of the SiGe layers; flowing a first process gas into the plasma processing chamber; while flowing the first process gas, pulsing a second process gas into the plasma processing chamber at a pulsing frequency; while flowing the first process gas and pulsing the second process gas, applying power to a source electrode and a bias electrode of the plasma processing chamber to generate a plasma in the plasma processing chamber; and exposing the substrate to the plasma to laterally etch a portion of the Si layers selectively to the SiGe layers and form indents between the SiGe layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lateral etching of silicon","description":"A method of processing a substrate that includes: positioning a substrate in a plasma processing chamber, the substrate including a layer stack of alternating layers of silicon (Si) layers and silicon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002683","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002683","citation_suggestion":"Patentable. \"Lateral etching of silicon\" (US-12002683). https://patentable.app/patents/US-12002683","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002683","json":"https://patentable.app/api/llm-context/US-12002683","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:24:49.050Z"}