{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002722","patent":{"patent_number":"US-12002722","title":"Power semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-07-29T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A power semiconductor device includes first and second disc-shaped electrodes and a wafer sandwiched between the electrodes. An outer insulating ring is attached to the first and second electrodes and surrounds the wafer. An inner insulating ring is located inside of the outer insulating ring and surrounds the wafer and a ring-shaped first flange portion laterally surrounds a main portion of the first electrode. An O-ring radially surrounds the main portion of the first electrode and is sandwiched in a vertical direction between the inner insulating ring and the first flange portion. In a relaxed state the O-ring has a cross-section that is elongated in the vertical direction such that, in the relaxed state, a height of the O-ring in the vertical direction is greater than a width of the O-ring in a radial direction that is parallel to the first contact face."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power semiconductor device","description":"A power semiconductor device includes first and second disc-shaped electrodes and a wafer sandwiched between the electrodes. An outer insulating ring is attached to the first and second electrodes and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002722","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002722","citation_suggestion":"Patentable. \"Power semiconductor device\" (US-12002722). https://patentable.app/patents/US-12002722","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002722","json":"https://patentable.app/api/llm-context/US-12002722","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:41:45.681Z"}