{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002756","patent":{"patent_number":"US-12002756","title":"Butted contacts and methods of fabricating the same in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2022-02-07T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor structure includes first forming a metal gate (MG) over a semiconductor layer, a gate spacer on a sidewall of the MG, and a source/drain (S/D) feature disposed in the semiconductor layer and adjacent to the MG, forming an S/D contact (MD) over the S/D feature, forming a first ILD layer over the MG and the MD, and subsequently patterning the first ILD layer to form an opening. The method further includes forming a metal layer in the opening, such that the metal layer contacts both the MG and the MD, removing a top portion of the metal layer to form a trench, filling the trench with a dielectric layer, and subsequently forming a second ILD layer over the dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Butted contacts and methods of fabricating the same in semiconductor devices","description":"A method of forming a semiconductor structure includes first forming a metal gate (MG) over a semiconductor layer, a gate spacer on a sidewall of the MG, and a source/drain (S/D) feature disposed in t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002756","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002756","citation_suggestion":"Patentable. \"Butted contacts and methods of fabricating the same in semiconductor devices\" (US-12002756). https://patentable.app/patents/US-12002756","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002756","json":"https://patentable.app/api/llm-context/US-12002756","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:18:22.498Z"}