{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002758","patent":{"patent_number":"US-12002758","title":"Backside metal-insulator-metal (MIM) capacitors extending through backside interlayer dielectric (BILD) layer or semiconductor layer and partly through dielectric layer","assignee":null,"inventors":[],"filing_date":"2021-11-04T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a semiconductor device comprises forming backside power rails in a dielectric layer arranged above a backside interlayer dielectric (BILD) layer or a semiconductor layer, forming a trench that extends through the BILD layer or the semiconductor layer and partly through the dielectric layer between the backside power rails, depositing a plurality of layers to form a backside metal-insulator-metal (MIM) capacitor in the trench, and forming a first contact to a first metal layer of the plurality of layers. Forming the first contact comprises forming first recesses in a second metal layer of the plurality of layers, and filling the first recesses with an insulative material. The method further comprises forming a second contact to the second metal layer. Forming the second contact comprises forming second recesses in the first metal layer, and filling the second recesses with the insulative material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Backside metal-insulator-metal (MIM) capacitors extending through backside interlayer dielectric (BILD) layer or semiconductor layer and partly through dielectric layer","description":"A method of fabricating a semiconductor device comprises forming backside power rails in a dielectric layer arranged above a backside interlayer dielectric (BILD) layer or a semiconductor layer, formi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002758","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002758","citation_suggestion":"Patentable. \"Backside metal-insulator-metal (MIM) capacitors extending through backside interlayer dielectric (BILD) layer or semiconductor layer and partly through dielectric layer\" (US-12002758). https://patentable.app/patents/US-12002758","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002758","json":"https://patentable.app/api/llm-context/US-12002758","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:37:46.286Z"}