{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002766","patent":{"patent_number":"US-12002766","title":"Semiconductor structure having isolations between fins and comprising materials with different thermal expansion coefficients (CTE)","assignee":null,"inventors":[],"filing_date":"2020-08-18T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure and method for manufacturing the same are provided. The semiconductor structure includes a substrate having fin structures. The substrate includes a material having a substrate thermal expansion coefficient. The semiconductor structure also includes an isolation structure between the fin structures. The isolation structure includes a first dielectric material and a second dielectric material. The first dielectric material has a first thermal expansion coefficient and the second dielectric material has a second thermal expansion coefficient. The substrate thermal expansion coefficient is in between the first thermal expansion coefficient and the second thermal expansion coefficient."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure having isolations between fins and comprising materials with different thermal expansion coefficients (CTE)","description":"A semiconductor structure and method for manufacturing the same are provided. The semiconductor structure includes a substrate having fin structures. The substrate includes a material having a substra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002766","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002766","citation_suggestion":"Patentable. \"Semiconductor structure having isolations between fins and comprising materials with different thermal expansion coefficients (CTE)\" (US-12002766). https://patentable.app/patents/US-12002766","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002766","json":"https://patentable.app/api/llm-context/US-12002766","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:56:52.198Z"}