{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002851","patent":{"patent_number":"US-12002851","title":"Semiconductor structure and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2022-03-09T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A semiconductor structure includes a substrate having a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first diffusion layer disposed in the substrate and adjacent to the first surface, and a first electrode layer disposed on the first diffusion layer. The semiconductor structure further includes a second diffusion layer disposed in the substrate and adjacent to the second surface, and a plurality of diffusion regions disposed in the second diffusion layer. The semiconductor structure further includes a second electrode layer disposed on the second diffusion layer and in contact with the plurality of diffusion regions. The second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer. The substrate is sandwiched between the first electrode layer and the second electrode layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and method of fabricating the same","description":"A semiconductor structure includes a substrate having a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first diffusion layer disposed in ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002851","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002851","citation_suggestion":"Patentable. \"Semiconductor structure and method of fabricating the same\" (US-12002851). https://patentable.app/patents/US-12002851","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002851","json":"https://patentable.app/api/llm-context/US-12002851","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T10:39:10.785Z"}