{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002855","patent":{"patent_number":"US-12002855","title":"Method of manufacturing a semiconductor device and a semiconductor device","assignee":null,"inventors":[],"filing_date":"2022-12-05T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the substrate so that an upper portion of the fin structure is exposed from the isolation insulating layer. A gate structure extending in a second direction crossing the first direction is formed over a part of the fin structure. A fin mask layer is formed on sidewalls of a source/drain region of the fin structure. The source/drain region of the fin structure is recessed by a plasma etching process. An epitaxial source/drain structure is formed over the recessed fin structure. In the recessing the source/drain region of the fin structure, the plasma process comprises applying pulsed bias voltage and RF voltage with pulsed power."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device and a semiconductor device","description":"In a method of manufacturing a semiconductor device including a Fin FET, a fin structure extending in a first direction is formed over a substrate. An isolation insulating layer is formed over the sub","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002855","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002855","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device and a semiconductor device\" (US-12002855). https://patentable.app/patents/US-12002855","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002855","json":"https://patentable.app/api/llm-context/US-12002855","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:47:36.998Z"}