{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-12002873","patent":{"patent_number":"US-12002873","title":"Method for adjusting groove depth and method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-09-22T00:00:00.000Z","publication_date":"2024-06-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"The method for adjusting a groove depth includes: preparing masks having different thicknesses on respective top surfaces of a plurality of substrates made of silicon carbide; forming a first opening having a predetermined width and a second opening having a width wider than the first opening in each of the masks; simultaneously forming a first groove and a second groove in each of the substrates by selectively etching via the first opening and the second opening; measuring a depth ratio of the first groove to the second groove in each of the substrates; and acquiring a thickness of a mask such that the depth ratio is an intended value, from a relationship between each thickness of the masks and each depth ratio in the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for adjusting groove depth and method for manufacturing semiconductor device","description":"The method for adjusting a groove depth includes: preparing masks having different thicknesses on respective top surfaces of a plurality of substrates made of silicon carbide; forming a first opening ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-12002873","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-12002873","citation_suggestion":"Patentable. \"Method for adjusting groove depth and method for manufacturing semiconductor device\" (US-12002873). https://patentable.app/patents/US-12002873","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-12002873","json":"https://patentable.app/api/llm-context/US-12002873","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:48:26.614Z"}